انواع روش های لایه نشانی

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In the name of Allah 

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۳ ۳ 

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Content : 1-Coating system Specification @- (C00) 2-Chemical vapor depositio Or eO0) 9-0000 ‏وصتا مره مس‎ 3-Physical vapor deposition C_@ene Cua Cvaporaiva Gputtericcy - Cowpare ‏اد له موسوم‎ 

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عنامت ‎Ket UHY‏ ال ميم Vacuum Marwal 6 ‏ی(‎ Fixtu re : 2 55-55 Monitoring ‘vaporation Sources) ubstrate heating ilow discharge unit jon Source 05-5 

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Rough TC 1 vent High Vacuurn Valve Rough Valve — Foreline Valve Cold Trap High Vacuum Pump Foreline TC 

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Rough TC High Vacuum» valve [DX] Rough vaive ۳ وق امس ‎Foreline Valve‏ Foreline TC 

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deposition method The choice of the deposition method depends on factors such ras Type of material used as coating and its purity -1 Layer address speed .¥ Substrate temperature -¥ The strength of the layer and its adhesion to the substrate .F ‎Fapeiderations 2 ~_‏ ویب ‎deposition ‎ ‎__-deposition method ‎Physical vapor deposition 

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Ex :SiO 2 SiHa (gas) + O2 (gas)—> SiOz (solid) + eo wea 82 9 se 88 Reaction products gon S—> 85 ‏مه‎ 3s ©8 —> @® andunreacted In @@ 22 gas out 2+ © ‏هه — هه‎ Reactants Products diffuse diffuse to ‏هه‎ 2 away from the surface forming Surface % te surtace | 1 reaction reaction 1 2050۱۳۷07 ‏پر‎ desorption © Silicon atom @ Oxygen atom © Hydrogen atom 

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UHVCVD (Ultrahigh vacuum) ۱ APCVD (Atmospheric ressure) LPCVD (low pressure) PECVD (plasma enhanced) MOCVD (metal organic) 

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1-produces layers with excellent uniformity of thickness Advantas 5/1 pcvp systems deposit films on both sides . _3:LPCVD systems deposit at least 25 wafers ata 7 Pressure sensor ‏و‎ 3-zone furnace ( Wafers ۱ ‏کت[‎ ‎<< ——— ‏تبت‎ ‎* : ١ ٠ ۱ Gas inlet Quartz tube Load door 

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Gas ‏هه‎ ‎“showerhead under a quartz ‏تا نا‎ under aqurt2 ut ‘window Single wafer CVD chamber. Adapted from [1]. Single wafer PECVD system, window 

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مه ماهر لس ‎where J>J,‏ مج عنام ‎(Grin gin)‏ ‎ ‎3 ‎ ‎ ‎Precursors ‎1-RnM + RnY > MY + n(R-R) (CH3)3Ga + (CH3)3Sb > GaSb + 3C2 ne ‎et ‎Osis inntner Gass (Comacteg are) Sf ‎le, 88 (Coming ‏ل‎ ‎p-Gabs (Acivelaye) 1A Ga, As Grating yer) ‎2-MY + nRH ‏بت‎ 8 + ۷۱ ۳ ‎(CH3)3Ga + AsH3 GaAs + 3CH4 (C2H5)3In + PH + InP + 3C2 H6 ‎ ‎n (CH3)3Al + (1-n)(CH3)3 Ga + AsH3 + Aln Gal-n As ‎ ‎ ‎ ‎ 

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The thickness of the layer is uniform and (i .independent of the shape of the substrate The 2-speed deposition is relatively high (10 to 100 ‘nm /s) al. Sticking and connecting better than phy: -methods This method is very suitable for multi-layered and ۴ .complex layers on the tools in the above designs .Coating of substrate layers is well done .6 .The process can be controlled at normal pressure .¥ full epithecary epithelium with low impurity without—V¥ «any problems 

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1. The need for high temperature for reaction, which has a negative effect on the substrate and the substrate. 2. The risk of hydrogen explosion 3. Most reactive substances are expensive. 4. Acceptable reactions at low temperatures are low. 5. Due to the corrosive nature of the vapors present in the deposition process, the substrate is also damaged. 6. Control of uniformity is very difficult. 7. The thermodynamic details are very complicated in this way. 8. Sub-reaction products may occur in undesirable places inside the compartment, and the exiting of the product of reactions is sometimes impossible. 

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لا 

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امه ام سح alumina coated f Sa foil tr << chromium coate| alumina crucible i vee Tested Tram, ey مب wire hairpin wire helix wire basket / alumina crucible with wire basket 

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270 degree bent E- Beam 3 electron beam Evaporation SYS magnetic field evaporation cones pyrolytic graphite of material hearth liner 4-pocket rotary copper hearth (OV) beam forming cathode aperture filament recirculating (-10,000 V) cooling water ۱ 

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لاتأعررمع6 أمعاعوم / واطاعن Standard configurations 6 ér 2% ae OgO le-Pocket Multi-Pocket 4 ‘Mult-Pocket 6 Carousel entered 49۳ 60۳ 360° Pan 3 4 5 okW Standard Multi Pocket Sources that have 3 ً 0 as its 5 4 150 100۷ been identified by our customers as the 5: 51 5 5 most popular sources are listed to the right. 8 3 3 7 MDC is has made a commitment with sub- 5 1 ‏دم‎ 0۷ component inventory to offer reduced lead ۳ 7 Ae +15KW. times for standard multipocket sources. 8 4 ‏و‎ 150 6 1 400ce 15kW 

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Electron Beam Gun 

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ate and film ‏نج‎ ‎coe cA _— 2 عمدت iputtering Target How plasma results in deposition 5) Deposited at anode: some Ar, some impurities 1) Ar- accelerated to cathode cathode ‏سر‎ anode 2) Neutral ‏یی‎ 5 target species (AD Al kicked off; ۳ & ~e ‏ها عت = هر سا رو‎ ‏سس‎ en ‏موی‎ ‎o <A 4). may ionize ee ‏سس‎ ‏ا‎ ox ‏ره بح‎ 6) Some physical resputtering of Al by Ar 

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Counter electrode Gas inlet Vacuum pump 1A gas plasma/ts-struck using an RF power source, causing the gas to become ionized 2-The ions are a¢celérated towards the surface of the target, 3-Atoms of the source-material to break off from the target in vapor form and coniiense on all surfaces including the substrate. 

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Varieties of sputtering experience Magnetron sputtering use magnets 7-4۲8 + 54 pe بست 9 ® BF =v, Tons spiral around B field lines v= 6 x 10° m/s for electron, 7 < 1 mm for 0.1 T = B field enhances time of e- in plasma Fe = more ionization, greater Ar density. +— & Yo 6.1920/3.155 Now. 5, 2003 

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Reactive sputter deposition: Mix reactive gas with noble gas (Ar or Ne). analogous to PECVD Ar + aN Also useful for oxides: Si0,, TiO, Cr0.... other nitrides: SIN, FeN,... 

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Comparison of deposition methods by cvd and sputtering 

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The accumulated layer in the Sputtering method is more denser and more 4 sadhesivepresulting in greater strength ‏یا‎ ‎In the Sputtering method, in order to clean the inside of the. of compartment, unlike the cvd method, there is no need for any additional Sputtering How plasma results in deposition ‏بيس اوور‎ Disadvantages of 1) Arr accelerated to cathode Al, some Ar, ‏متسه‎ ‏و‎ ‎Crush and increase internal # cathode 7 anode tension 2) Neutral Ye Impurities # target species (Al) ‏نا‎ of bare Local temporary loads on the # ‏بح | © لهس‎ ®yelkv surface ‏يد لاع انس عد‎ 90 Chemical reactions with # ‏رس‎ 44 residual gases inputs (eg. 00) 6 Some pysieal lonizing other gases such as resputering of AL by Ar oxygen DC Sputtering and Magneto # method« 

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Physical How do we monitor the process? 4 Reflective optical Optical: Transmissive optical XL12 Multi Crystal Sensor Head Package Includes: 1H Multi Crystal Sensor Head © Controller @ 1" Bolt Feedthrough or 2 3/4 Conflat 30” In-Vacuum Cable 18 12 Complementary Quartz Crystals 11 15 Crystal Carriages 2 Sensor Shields XL12 Mult Crystal Sensor Head 

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Crystalline Thickness 1. The crystal begins to oscillate before the accumulation of the layer While the crystal is fluctuating slowly, the target atoms .¥ accumulate on it Given that a really thin layer of any material produces a quasar equivalent quasar frequency oscillation, Df can measure the mass and, consequently, the thickness of the layer 

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Optical Thickness NI Click to continue 

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Extractor ۱ MA D | ‏ام‎ س٠‎ Substrate Ton Source | Ton Beam 5 lon sputtering Substrate Sputtered Material 7 x i oN Ton Source Target | Jon Beam 

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‎SUBSTRATE HOLDER‏ وى ‏يبو تك ‎ee‏ ‎PROBE‏ كتيده ‎PUMP ‎ ‎ ‎ ‎GAS ‎ler ELECTRON ‎BEAM ‎EVAPORATOR ‎ ‎ ‎ ‎ 

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The atomic layer deposition, or Atomic Layer Deposition, which is briefly called ALD, is one of the advanced methods of chemical deposition of the material from the vapor phase. The basis of the atomic atomic layer is the passage of the chemical precursors from the substrate into a vacuum compartment such that in each cycle a atomic layer of the 

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E- Beam Deposition Substrate 

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E- Beam Deposition With IAD Substrate 

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Electron Beam Deposition Click to see coating simulation Substrate oo Bssisted Oepositica Substrate 

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TR 30 0 70 1 50 20 20 40 42 500 550 300 880 1۳ 750 aon a0 0 1/2۷۹ 1۳ 

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سیسات Noa ‏ایو‎ 

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