صفحه 1:
1O@PG Clobd Cusicess Council
Roakvap Process
“Dke Rood @kecd”
صفحه 2:
© Dke BOO Roudkvap Pec
۰ Vhs Qoakvup Process preseutiva was prepared by
these wewbers oP the ID@OPG Clobd Ousiuess Ovucwil
& Oaiiood Peckuteqy Covi:
— Greve @dexosoa (sackxosva@asynick.cow)
= shots Obuct (hists.O.Obui@usu.ckeoot.cow)
(تعحس قعاص عاو عورا -
او 6سا وگ رات
- (س تلم امس رای
- lie Cur (incur @visvv.cvw)
صفحه 3:
عم ©
° Ohere does IDOPG Pit ia wits he IPRG ud MED
Roadwops?
* Okt is the ۱۲۳۵ Roadwap ved how #طالجمي ۱ حول
© Okt is the OECO1 Roadwop ond how does it work?
© Wow des IDCPG interact wits this Roadwop Process?
٠» Oky 1O@OPG skould be iwolved.
٠ 1020۵ ) oF Pocus.
۰ Pye deo Pacito 1 گ DEO Roakroy
Process, chip io site (OQ |
۰ Dke تلم
— IDRG
- 1
۰ رمق 1۵ ) oP Pocus.
8
صفحه 4:
@ 1۲۳۵۵ & MEO Packerjey Roodkwops Ietersevt
ID®PG cktresses the Gecvicvakuctor Packayiay ceeds of kis space.
نو لها
Deck Requinswercts
صفحه 5:
© Okt is the IDRG?
Pecks Roakooy Por Gewiroakoire (1MRG) on werent تمس
FP sewicvadunior techorioyy requirewects.
* ۳ objective oF the TMRG ی با ی advedrewedts tt the امه نطو
viens.
* Dis assess ed, oiled rookvappiog, 0 oooperdive ePPort of xfobal techusiqy
Rocwrers onl suppers, spverncet orci rit, cad ir
مسا سيت سا رم ليه vkdkewrpe exe ساد امج ججلا جس سي 210170905 Whe .
fodustry over the uxt IG pears.
© ie peered by be @wopeas Geatcouheter Tehsiy Besockion (B10), ke dopa
Chrous ond مسق و۸ Pechoobay “kckettes @zzorktca (MID), te Koren
ی horny مقس ))۵/0(, he Cowirrahetor Thsiy Bosak
(10), ad 1! ماس لصحام 05 مسيف Tnhety @zsocktes (MEP).
* CCOCTCONW ts the وه موی للم Por this otviy. Phe ID RG tec of
GEOSTECT ملس وه the DOGO reqog eves.
اس لها
صفحه 6:
۰۳۳۵۵ Veckarloy Dorkicey Broups
he VDRO process eecowepe deo usa oad thbue hrouchou ke cowxo ny dbo he وه و موجه
“Phe hey Poster مه ما و oP the Rou © obit omens ta tkery doves, reqirewoedts, oor check
ook,
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تماما باه با سوه مهو وا ued ea) areas fet way prove sokaree.
ke POC weber ceo doar oppor nities Por seu مرو لو او
تا gros ore coud up oP uoksiber eckeokay experts Prow chip wanPackwes, supphar cowpanies, ucersites
cd erates, oho kbs, oad srcricoudcr teckarbay oocorte
ke بجاو روما Brower, deo kreun a TBs, or coxmpriced of ارو اما of
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Prot od هوا بال
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الم روکد جمدو
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صفحه 7:
ما6۳ و باق ۹1۹۳۵4۸۵ خام Example ©
تسه
Uefa embeded component
assed Secs Walid aie fr faa de
Compe of tient carer nes (emis icon emai
septa cap isha | واه اس ieweo
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ale waar tie proce teeta سول موز
Loeamitwe adaption
in bare come
a مومت ملع تنس ی
سنج ای ماه ing
صفحه 8:
WED kus 51170 مسصلمز Support.
1۳۱6۳ __ Statistics for the 2004 Roadmap
۰ > 470 Participants
+ > 220 Companies/organizations
+ 11 Countries from 3 Continents
+ 19 Technology Working Groups
(TWGs) (added Sensors)
+ 7 Product Emulator Groups (PEGs)
+ Over 1200 Pages of Information
+ Roadmaps the needs for 2005-2015
صفحه 9:
عاص ححا () جلدم ة) 10006004
۱021 Poreses va top بل( اصسل<) سم وه تعاطا Broups.
Doris
Portable | Consumer
High volume Consumer Products for which cost is the
primary driver including Hand held, battery-powered
products driven by size and weight reduction
it
{thousand dollar cost limit to literally no cost I
Products which must operate within a highly reliable
environment
Products which must operate in an automotive
environment
Office Systems/Large | Products which seek maximum performance from a few|
Communication Systems|
Medical Products
Defense and Aerospace [Products which must operate in extreme environments
lo addiicd, (Rey andress levhewivgy areus Ula her لجمج تلك "١ لاك جاصكاتج
Crows.
4
© “oress-cul" wrx eerures Perdback betwern و و
a)
7۳
صفحه 10:
عه() رطهط) واه 10۱ ©
109 مص Neches!
۱۳ Berge ‘hPorentent Doreen
© Deora Peckeokrtes:
سا مقس 0 9
Derry, Gronks & Der Poke 255525 حجن
اك
ما مهو«
5 ۳
ed | شمیت سس( 6 وتا سا
تن سس لس
۱
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(ROP مس ۵ سل
] ~The & oe oP ker rece whore
WOPO ud Pome.
توا مسق
مه میسن
ree Det مومس
رن رما تست
سین
سه
read Crees 0ك
اسف 10066 - ما6 On
hie TOG, ناوت
00000 Blae-Componet& Subsystem
10
صفحه 11:
ات(1) ایور 1۱2۶0۱
وتدحي صتصاوب جملا وجوسفوحا كاعدطلجص"] وصقمجحت »تسوه "الجدووصو" ۱۱
10۲ 1۲ 12 13 1۳ 1515 1۳۱5 6
7 x
2
x تسد
مس 1۵۲
ir ی
صفحه 12:
skort ter cboheoes ۵۵0 ۴و عامممع)
Improved assembly methods are required for attachment of bare dle using wite bonding techniques
that ackress the need for improved ESD control
The projected reduction of ip chip bump pitch from the current 180 um to 100 um in 2009 and for
there down to 70 um will result insignificant challenges to the assembly process including solder and
underfil materials.
Simplification of the assembly process needs to be addressed in order to assemble multiple
intarposers on an array format
‘The infrastructure for including embedded passives into the interposer substrate needs to be
developed and qualified
Testing systems need to be modified to address the known good die challenge in conjunction with the
“glue” cirutts that are positioned around the semicanducter die;
Design tools need to fully develop the positioning and manufacturing sequence of embedded passive
‘devices such that both orientation and relationship to the power pins of the IC does not cause eiruit
ringing:
Encapsulation techniques must be improved in order to establish componant packages that are
impervious fo the extemal atmosphere without necessarily being hermetically sealed
Proprietary designs at te CEM level, OEMs view their designs and intellectual propery as 2
competitive advantage and are reluctant to collaborate on a common design (not always true, but this
issue continues to be a challenge with naver generation products)
5
6
صفحه 13:
41 / 1۲۳۵۹۵ عونا عولمصامس Opdtate ©
۰ ۵009 1۳۵۵ Roukvap retewsr scheduled Por Devewber 3, .
۵00۶ 06 رما و له ما وله COO? ۵ BPEX,
)جوا
09
صفحه 14:
© Okv 1IDOCG should be مرج
© ADRGE Power way 09 "Prod ead” woPer Pob areas, wis o chapter م
Gewicvaductor Pszewbl & 6۳
© E01 Porers way 00 “board evel” weeewbly, wil oo vo
Gewicoaductor Psvewbl & Parkarcn.
© ADREKDEO! are workin ocether to okys موه متا و &
عسو سما حاتت
— Oxny of the sue people ore oo bok texxos.
— Gove IOCPG wewbers are dso oo bok teas.
© ADOPCE’ Pro ناریو موه دم جا & Pacha.
ام و Pity take the ouput of the IPRGDEO Geevicoaductor موه
& Packeriay Roukraps oad ver thot pupal io rect WDCC" arivites tewards
sob saps is he roankrap.
© ADOCC' corporae wewbers wil beceh by developer دوه رده ام
red ike, choles.
ae
صفحه 15:
حامصاف 0) جام مجه (1) عد عمحاحه ة1) عصاص لحوصاموج 8) امجاماةا ©
Derket Otze Por مب = Dertet Opporinites Por IDBPO wewbers.
|] اس
0 ۰۳6 جوا ams | ame [ame | ame | ams | amo
Gnracie Gibsirsiew 5 6095| 5 Gan] Ss aren] $ 6672| 5۶ 9] 00
عع لها 5 701015 0009| 5 708 5 00015 0005 0
باس 0 Ss danl$ 0002| 00905 6075 000] 0
(Dold Ovoprunde 5 00| 1/۵] 15۳0| 5 Vee S ۱:۳۳] 8 ۲
De Bick Doienale 5 05 5 Gols ars als aie
مس امس Duteviale 5 5 5 5ح 605 9
[Colder Dalle 5 5 5 aos Gels ۳۳8 ae
[(Daderhil Duteriale 5 als 5 1018 als ۲۳۱8 ۷
Licnaid انعم 5 8065 5 0005 0065 0005 0
وا سدداعة اسصاعاد ت) | 5 OLS sels ails 09 6ه
1۳۳ 5100۳0 509001 | 50006 | 5062| 5090585
Source: SEMI Industry Research and Statistics and TechSearch International, November 2005
hee Forecast ue eupphed courtesy of BBO & Tecksvarck “kaereratod. The
Pd repent te aah Prop OBO 2 web exnaby of ws seh 4
as
صفحه 16:
© ساسا تمد جز "اما ام ۲ تساممورا &/DO
From the Co-Chat of the Steing Commitee af the Global Business Comet
“The Road Ahead” 5
6
صفحه 17:
© QRol-out plas Por TWOP ty address لور
Por a OO Rouckvay Peew.- DOOC
OOO Roukvay Deen oreuey a roackvop teh (“red brick”) ocd سا من ری فسوی امس
roukrapy. - DOOB مستي
OOO Roakrp وی سا سوت موب( w he OPO,
OOO ead OPO virwerwre Pare TOPO evrcts to صمت - وجب سوت من سح
- Owe Caner we short premectston ot UBD & Phere BPs m Geprecber ODDO.
tw support IPROIDEO updater wits teat & coxa: back to TOPS 0۵0/۵۵ هت
طعممو/ عضر
دستصنس دوست جامدنا ص وذ Doe DOPE worwbers vn he PROMO reerkrap MO
تام Lourie Ros, Weird “ecko... oder
“fe rch” mph
eons | Sow موه ۳
۳ nd oy be opmata
oanbehecthe whan oe OOM ent
a
صفحه 18:
© 08 خام جمجم3) لصلحصو ووو Poms Por 86)ذ)41)000 Dewbers
© Devebbp Peusible Coobedded Oowpouruis.
© Oevebp Cokowwed Duterias to Boable DoPer Level Parkagic.
© Brice Oohuioes to Resve Nherwal Docagewect Issues.
© Develop Dew Outerids to Reduce Sysiew Oust Okie Detivertay the
Orvessary PerPornwe.
° Close the Bop Between Chip ocr Substrate Ioternoccent Deusiy.
© Resvlve the esues low (C cod Ou brie to Partragicgy.
6
صفحه 19:
لك
06
صفحه 20:
a
INTERNATIONAL
TECHNOLOGY ROADMAP
FOR
SEMICONDUCTORS
2005 EDITION
ASSEMBLY AND PACKAGING
‘Dhe cowplete chapter vost be dowloaded Proc the IMRG website:
میا et rarer OD ODGINRG/PPSOD!
“Dhe Pollbutey stdes coda hey excerpts.
هه
صفحه 21:
)ان Mable مرول ) )م6 900609 1۳۵۵
Ob oP سا جز سوه راوس سامت بت - اه نمیا مت ما لح - میا سم IPRO Rear.
سوب همطل a br hey tigre ds,
عمسو ملح 0 معدا
rw Dcternke
Passives لوا لو سبط
|] ced Pookagey kPrasn wre Okun er
Ckrired Desk ع سوس
Crome Peds
Drrrtxara ool Power Oubayiew نوفا
Blown Packager, |
ان تسه
] ced Sroka cod ص0
‘Dhercod (odeker cod Okouksioa ol Octet
(Bauroect Recparewmente Por Bormrcpny Prk Tyee
موه مس
OcPer Level مایت
مها اما مت وان
۳
] Pick Ol Ord Orrq/COP Packxps
وت سوت
ocd “looyraed Passives سبط
تسده م۳
0
rgd Gubsrae Peckooky
60
Olver Goope
مان فطل
سوت روط
Grade Chip Parkers
واه منت ادا
aber Level Parkengen,
,سج" ۱
ماه 90
|] oon مجه
اه مین
RE Packers
۵00
۱
ماحد
رت
ی
سمخوه
Ove
Reka
Packer od ‘kaerroment Ohara
۳
و
Rokeby Pets
Gok Crore
صفحه 22:
ان خن عاطاه؟ مرول ) رمبمطه) سل مجمو86 900609 1۳۵
انوم
معوسه سرا مه - (0) ما۳ و Cymer
OP's سوه نس
Parkers) امسسوا) م۳ لت روا سوا
|
(0) ماه ,۳06 وتو ما۳
اس 0 لسن
صصت وان تبون
و
|
Daher keel OFP vend 9 ۵ هعموص
Deckukopes Por Borbethied Devices
سس
ری تس
مور( و مسر
ی
Obese وه
POD Mores ون
Ovex
Poway ‘herent
ما رو اب من لو ۳
اسم"
سس ۵/۵0۵۵
سا اجه مخت رسمه
مطحم لمج وطن 0
|
Dest
68
صفحه 23:
© IPRG: Gicte Chip Package
easton amercob ecard res vel ort bre Pras بد وم او
سس و بو مت با
1۱ substrate dowrirates fhe vet oP side chip packet.
+ pst per pa hu beew treudkay up, stead oP dow,
بصجم سوه او و ane u problew هو Operates *
۰ higher Prequeany chipty-board speeds Por peripheral bees.
Cooks ا ا
صفحه 24:
© IPRG: Wick Pice-Coucd Packages
° @ackage pit cout qos os higher Prequeucy cod higher power
deusiy dewoed wore power ond youd pice.
© Gubstrae teckaclypy requires wiore-vies, blicd & buried vias,
stocked vies ood fiyhter tices cod sparicy.
© Gubstrate techology odvoares feud to siqeiPiccct post iaoreuses Por
desiqaiest ond a reduced supplier base.
° Gpstew-ic-Puckage wil bevowe wore ieportadt to reduce the werd
Por high deasiy ioterpooderts iv the pachoye substrate od the POO.
or
صفحه 25:
APRG: Chip-to-Package Substrate
Qevebpwrd work & required Por Proer pick thar wire bout & aree ray Ply chip.
Tubie 960 Clap to Package StbtrateNoa-torn Tors
سس ae ee
سید 7 co ل ل
Fich 2 تم جر
2 7 8 3 #جصو سم
7 7 5 = 0207 مم6 امعراة ناهد
20 35 )هناد دس نومه We
mao 4 35 35 5 هيداه ةا
Tae Ge pic wk GH 4 35 3
SSD 30 3 20 20 عه ملع لها عا
3 35 3 3 اج تاو تسایس و۳
Pip cip we ney BS oD 16
ip clip os tupe تاو saad 35 0 | * 25
Tabla 906 Chip to Package Subsirate—Long-torm Years
77 209 |] 207 | 206 | 27 ] 5
Laan: Pac aw omar 7 3
NEUASTC Mol 1% Puch ]سنس zp
PC Peal Gav Za ow) 1
دصت مساح مامد تر تسا سا
١ 35 مق شنم سد بي
Teese BSS Gs) 35
pi saa] 2 تا
ee) 35 سرت
سس ی
مح
صفحه 26:
© 1101 امصنصرواةا) جمساصحل ©) ججاعهة) :5 ؟) Propertes — Deu Derw
© ا 0
صفحه 27:
© 1۳6۵: مه Oubsirae Phyo Properties — Lowy Der
صفحه 28:
© AP RO: Gpstew-t-Puckage - dePieiioce
© GRP exnbles reduction جا size, wer, cost & power.
- Gystew-mr Chi cae adders size, weight & power, but ot ost, desist & test
ور
© GAP مه همطل وخ وی موس
اه ول و و such a DEOG, opp, biv....
© acknes OO “stacked اس
* Requires Kanwa Bood Die. ‘System
on Chip
سس سوه یه وه
‘Side by Side اج ا وق
Placement | سس یی 1
هه a4 و
er ممع مسحو
تساو ~~
Si
ت99 :»سس مس ۷
تسس مه مه وج
اعد لسن ]ميت
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نسم مد — cx) Pre موه سای
Embedded لس سم ممه ution, TE 4
ES
الک نا ۱ سوت
سعد
وه
صفحه 29:
5
”/1١585 : 8 دومج شوج 7]) جووحاصه ”)رودص
‘he wrober of wracked de aad ter arabe oP de ta OX? re cheers.
Table 1D]a_ Syctomin-a-Package Requirement
صفحه 30:
٩۲۳۵۸۵: اس OcPers
انوم مها سوت ۳ ماو مس مسا
Table 1024 _Thinmed Silicon Wafer Thickness 200 mm/300 mm—Near-term Years
DI Pk a »ه |[ » | 5م | ” | © | 5« | م سدس
7
APU Pal Gite Lange fm) a [=] s = pe pe > |e
Tie cian of aad wade (aT ۳
م متس | w |e | o |] و | و s | o | مه
Nis cine aad wale a مده
: 7 مه | a | wo | هه | » | s | w | م | «
is package x Sst x)
00
Table 1026 _Thinned Silicon Wafer Thickness 200 mm/300 mm—Long-term Years
Fear af Prodction 004 | wr 7 0
بصعم Puch (ond (onto 7 7 1
20۳/۳0 1 ۵۷۱۱:۳۵۵۵ 25 20 | # | 6 2
Ppl a engi mp
یی of aed a a AD
سح
Sc موز
“teeta ed pat
هه
صفحه 31:
دجاه ة) اصردبا عصذاه() :5)85) ١ك ©
© Opur terw choleages:
— VO pitch betwerd ISO Use - CSO pw >dOO VO
— Golder joict retiabiiy
جح سوه ول له روط
— وونل )2۵0 structures
— TOC wiswaick cowpeusaivg Por ها de
60
صفحه 32:
© IPRG: Plexible Gubstrates
© Oru terw choleuges:
— OCoePorend! low vost مر substrates
— Godt ood thio die ossecbly
— Wreerdicg tt ouy cost operon
صفحه 33:
ITRG: Votercouert
Tie very oledradiay tr excita packer relly wi وش مسج وان ج ساپس Brow
‘ew wrieride, cow provesees, cad صا ف سح( مسج تنج Gi evel.
Samay of ee
The ipidintodactoas هد matoalo process thal weno ام ما
‘oudustnir requirements ad rece the dlecie pean steate
‘aiegrtion aa astral caraceiaton challenges
Taiegation company, CMP daage, ese paloning, secre coat
.هدام يومف Lack of intesconnectpeckagagarchiectue desea
سماو tool
"Neve ممم تاماسم aa proceses creat new chip velisbily
هط سوه رسد اد اما تام ein,
ی ule mechan al be 2:
ine edge eowzhnes,wensa depth an profile, va ape tc Uae, جع
(be to متس CMP aftcts. The mukipiiy of evel combined with
‘evr mterals reduced مجح size ad pate dependes processes
este ths chlenss
‘Ae fence ane ane iavrccnasstpocesres amt be compatible wid
‘Gevicerndomps and net mann actning tents the specie afer
‘ize Plas dawnge. contamination thermal budeets, cleaning of high
AR Seto defect flea: procesze, lamiaahon race of coal
texte ae key concems ‘Where appropriate global wiring ond packaging
مد بذ اعد له ما للا سيد legoted fashion
هه
م2
[0 fae meen: tomeet contac
seqacement and reduce the lect penatrity*
Engiesing 22222
مسج که اجه چم compatible ith
كم تممه يما
“Tie dimensional couvl of iieconaeet تج مامت
is atcociated mettogy ie requited to achieve necessary
‘eat pefeemance nad eli
‘Nacuiieraliy end deck mmuagement tar meee cverall
|
صفحه 34:
(ل لمم ) امه :1۳۵۵
سس
Tine aad vn ideal oaghnes, mienecion ofp 70د طاص
لاله سم دم گنه هروه دجسم ی مها هقی
sdvarcelyafet eleva scateiag ia copper Lass end cause iaceases ها
Tine edge ouslaes, wench depth and probe, vis chaps etch as tama
مدق clesnag. CMP eftes. The maliplty oflecels, combined ith
new mei, reduced اه size and pater dependent processes, ase
of lienative aemones,cptical and BP interconnect. centiaes 10
dalle.
‘Asano وت مه یت sat ling Ligh apes rao racic
‘lle همه متس ال جوا دجم مهافت stracuces
كما مدال حهقه :د لاط اله
رت
۱
effects, Novabsctve devices my be mecrported ito ۳ ]
the aver
Traditional ماه مهبم wil as longer sau مسقم
‘eguiemeat, Defining and Suda soliton beyeod copper and
لحت تدم مهد لت جوز nacvetion, combined wet accelecnted devin,
packaging tad ascuvenionl sseoouaeet
or
Bead وهام
تس تاه ده مس of موم و
Tie dimensional contol ef intercennos amare (i
as ascciaced meusion) ie eqnsee
Parening, ean, sl Bling wan Gnesi
| md suche, facing
aterccnects for emery devices
dca colovons which eddies global wang sale
صفحه 35:
جاص ةا) جنوسهعصادوام 0) :1۳۵۵ ©
تسس یب با
TO header & buttery packvarperg. - مس لین با اس سا بطنه ما
Oowrkerwstody orded orqaate packagey Por cost seeitve opphoatc.
سم
optod devi Por his skit rate application. 8 سا یی موه نها موف منز 60 >
hare knee هايم بخاص ,وروی رهاط ات و روج موق ز 40 زر
pebrver opted Mer (POP)
Odheoive to wezure dhecet through suoperdkry high iewoperotune proveoes & prodvet uae We.
بو
۷
Deter develoroect Por pok-ckntotoa (POO) Poor.
or clea ob oye Por opto wird. لمحت بای مان Opry
wore Puteri ka packer: كسان نا هموجه pred
هرس ها فسوی ین من (DLP) promen b nieyrte keer بجفی ولمم وف(
deve, en to proudke ecuarancentd procoazn Por a OOOO) uxPer. (00060(6) بشد
owe werv-vptcd cuwprards, ey. power waveguides cod beac rePleviors, way be
exvbetkked ta the OFP extort.
dinky, phoakteciae, ODO 10 حصا ,دصحت O00 treed OF cay have opto ©
بمطوصيمق waltpkemer/dexmdiplener, phe (ROP vcctor, ood لمي مات ی
popurtors.
صفحه 36:
بعاد ة) 02) :ج١11 ©
] oF he teckorlqy choleuwes Por RE packasfoy arse Prow the Pant thot ihe IO packagers
ponfueertay provice, techorloyy hur ledge base, هط اه رکه
| 10 packorfory developed ta the hast Porty odd pears.
۰ صحو
اجه ,میسن لوط wits bouday wires oad تحص وه وس ج401 -
موم 6۱ سا بسا ی آممووه بان bP Pent of
6۳6 ان بو( ماو موم طممصوت لو با بماطلم انم desks ont
۱ co-desiqa Por the broad specie of RP worket appicatoas.
ts s7tertcs properties—cokter compares, uederPis, subpircies are و و
reshired,
- @etry able to ewbed posse owpourdts iL POO.
— Do weet he bu cost chileuyes, ewhedded ioductoure اجه وروی موی لو
و نع pacharey Por RP ارت west be diqeciy pursued.
— Dorks ty eucble device pack oo~deorm it OP packaces wil be very teoportet.
صفحه 37:
IVRE: OEDG
سید مد مره 128
نموه
هه سود
صفحه 38:
© APRG: Dedicd & Bio Chip Packagiccy
١ @10000POT OLY
Oo عله" مه بحص بجا علانب مج
0 تلمجت روا
2 009 جوا و روم
9 هه or جوا و لطس با بو نا تلم روص مج
باه ام ker» voto coerce of bicreayece eck اجات
= Day ام چا موم تسد توا اهاط
١ 910 66006861008 8:8118 8111897
2 Dope oxen ay pte ery onl risk coma,
— Por Pe-susraciay devices, تومت Pakire rar as bu a= (DD per, Pew pp eriticd Pah rete
حصت بصا صخرت صا مق Pakures ra robabily tere
= C01 e 9 wapr comers.
ما سم وا و و نموه مس or يعلط دمجت صقانت
۳ snc boukzed hou er he kids vokne charset ra uaa dehvern
را okaleapey fe pockecp subsirae ced POO.
+ PODOPOOTORIWB
— fia areordeare uth reueiory requires Por وا
2 Requrewents Por coral oP te coum Parturiy sourcenect, kotor oP fe parkayes, oad dorannectare,
وه
صفحه 39:
د00 :1۳۵۵ ©
° Dodapy package costs oPteo exceed die Pobricatiod posts.
© beadPree svklers.
* bow K & Wigk ( سا
° Wigher provessicy tewperdures.
© Order recy oP eairceectl tewperdures.
© Dore ePRivied ther waragewed ueded.
صفحه 40:
۳۳۵۵۰ دس & Cie سس بنك
Onw Poke wodes coed by wu unter weed 7 |
Sa nian utc ee
sehen Pell reendrrcstr.
* Dke toiroduction of the cew wotertas ond structures to weet eovirzovectd, heat ood
اه را نو رم و بو او
توارط روا بط بت و لو چا اس روت Dew ©
products. جات ۲ Dew rekobliy tests suck os drop tests .(
Cometic betwera Piekt cad laboratory testo. .©
Aeoproved coeds Por Pakire detertiza od oats (ec), X-roy, ant, ©
ات مس ماو اس اوه معط ای
ToterPartd delseriica wll coi 1 |
thot worsrurd by the treads to haryer chips, ews لو روا او be o
خم وجلمم صلم Dore livers reqhine the موه وا اوه له وی
come irr Parr.
بلاط aod soodetag Por IPe toe prectiva (ec), م9 2
SINCInepropeny correlation, ob-itiy wehods, wodkar oad panne
opprouhes).
0
صفحه 41:
APR: Packagicey Duteriak
Nowa Gales ee
Sa a ae aa aL a ae
fn Cate pt rads arenes
Washout
Unde
Cpe wi sda ofA rss
Boned ema cision
مضق بوم سيد
sey ad ea RE WR
Tr odie use toc ue ona war
Mong compo fr vary Sie ik wie
جوم وام و رنه انوم
Fiore thn] cma to mesineingpowe densiy
ee Slip Cap Na Sede ed USN ts pre ghana cys لجدد
سیم هو of lene va aber 1D
tr ate امد سس تن ماهتا
nd NENS pps سس ل كسد
a Tow Sik dace
Love dei oa igh Bewanyapiaon
هد هه =<
Talasis BOL ea aes mapa boa OT
a
صفحه 42:
© ٩۲۳۵۵۰ هه
روص امنسی) ۰
حالما جوم 0) -
— Power distribution & power subspstew
° Drerwo-wevkodicd
— DOodetcey, & سول
* Cquipwect
صفحه 43:
1۳-۳
International Eleclionies Manufacturing Iniiative
WW Se WAY
“Phe VEO! Rouckoup te ool wvatable Por downbrrd 2 TB wecbers
pr orks porch.
° Phe Pokawieg sides cous key excerpts Pro the ODO? Roxckray
ولج
صفحه 44:
© 1۳1 Coordination With ITRS
+ INEMI and ITRS Packaging Roadmaps have
different focus areas but a lot of common data
The chairs and many team members participate on both
efforts to assure good coordination
INEMI has a stronger focus on business issues, major
market trends, and upstream systems integration
ITRS has a stronger focus on long range technology
issues and semiconductor integration
The key business issues are translated into gap analysis
in INEMI which directly relates to research requirements
for both roadmaps
We use the detailed technology metrics developed by ITRS
in the INEMI roadmap so the roadmaps do not conflict
ee
صفحه 45:
+ The profit margins for the packaging industry have been
dropping
Capacity expansion has been very conservative over the last
three years creating a capacity constrained environment
Overall R&D spending dropping and shifting to lower cost R&D
centers in Asia
Materials and subcontract pricing are increasing due to higher
commodities pricing
+ The distinction between Semiconductor and board level
packaging technologies shrinking
+ The number of technologies under development have
increased and diversified to address new
+ IP enforcement is increasing and concerns around IP
protection are increasing with the move to Asia
ee
صفحه 46:
Industry Technology Gaps
است ۱۱ ©
Tools and methodologies to address chip and package co-design
Mixed signal co-design and simulation (SI, Power, EMI)
+ Close the Gap between chip and substrate interconnect density
Increased wireability and dimensional control at low cost
Higher temperature stability and lower moisture absorption
+ Wafer Level Packaging
VO pitch between 250um - 400um less than 100 0
Solder joint reliability and cleaning processes for low stand-off
Wafer thinning and handling technologies
Compact ESD structures
+ Impact of Cu/low k on Packaging
Lower TCE and modulus substrates to reduce die level stress in
flip chip
Lower strength in low k which creates a weaker mechanical
structure
+ New materials integration and the overall reliability of new
technology configurations under new use conditions
eo
صفحه 47:
۰ Test for bare die and approaches for verification
of die performance in SIP applications
+ Design and assembly process integration on
semiconductor packaging and board level
packaging
+ Reliability test standards and qualification
process — Do the more demanding
semiconductor package standards apply to board
level assemblies
+ Passives component technology
Standards and process capability for 01005 passives
Inspection process for 01005 passives
صفحه 48:
Reoowwended Breas oF Poous Por IDDPG Dewbers
© يدنه
© Devebbp Peusible Coobedded Oowpouruis.
© Oevebp Cokowwed Duterias to Boable DoPer Level Parkagic.
© Brice Oohuioes to Resve Nherwal Docagewect Issues.
© Develop Dew Outerids to Reduce Sysiew Oust Okie Detivertay the
Orvessary PerPornwe.
° Close the Bop Between Chip ocr Substrate Ioternoccent Deusiy.
© Resvlve the esues low (C cod Ou brie to Partragicgy.
eo
صفحه 49:
Ouwk Op
9
صفحه 50:
IPRG: OPicdt Chuleages 2 OC av — Dew و(
The EO Rowkoy seyorus tres tir kowe tt oe Der Tere & Pet Ober Does 2 22
we ed howe tet ere Lowy Tero & Peet Odor Dobe <OO exw.
[BBO wroteriale torkudiog Oulu
[rec wrebood aad buwp w Ou or koproved barier sysiews bowdable pads
نوی وب vader wekavloqy 1o uesure lourk dieleoine lolegmiy یاوه
ree colder buwy syoiew
oproved Ructure iughures of Gielvotnie wateriale
ماه اعت اس
کساج مومس اه ساه [Retobilny
Deckausws tp weuowe tke eniical poperies تممه 1p be developed
Pobioy over copperiiow K
Gouwlotios trekoology Por eimuie incorporation ulira low K dieleetrin
10 puck beiuees QDycr oad CSD or greater thaw (ODIO
[Golder joiot ماس
[O ofr ikiasiay vod معط eckaolowies
Cowport O50 structuwvs (hie upplies tw viker packowe pes ae well)
[TOC wiswatck cowprasatioa Rerlurge de
|topact oPaew wutertals
[0 oerLevel Pachacios
صفحه 51:
ATRG: OPPind من 99 2 مسا - Ora و
۳2 ماه له ساوسو Paorouarew
نت
| هلسلس tools Ber traveiecl therwal aula ۱۵1۱
lotrel chm
[Gtevivival (rower روجا ادال XD" wiywal weed power hier Growrtaied wk Riker
اس ریاس ها اج سوسیا
ساسحا عتساعدس ا
0۳۳۳
اسر wert Ihe Qeadkoup دا نومروه دس اوه" 0010
erection 0[
Low over embedded هسوسو
level یداه ot both walker مسي سريت اس سای
[Der vel ewbedded ewwrprarcte
0 سای ral Ror thio dhe
connor, Se) ]وه وه ماه مهو
lowest mre)
[Rehab
ای |
oto devo لساك حا حك كنلا
ره سس سوه vad اب۱۳
| موس ساملس Toole wad Gerubolors te
Jockirese Chip, (Racha, word Gubotraie
مها
موی لاسام |
مستي سير مول سيا
صفحه 52:
© ATRG: OPPind من 99 2 مسا - Ora و
(۹7
طامراایی chip ood ساوسو |
و
9 ۳
ممصا ادا
د 0
ساس مايق مالسا
هی سوه بات اديت ا
socio 13 low poet operates
صفحه 53:
© ATRG: OPPind من 99 2 مسا - Ora و
eT
[Oo Deniers oad sxeulaion tole
ماس امه مساك فا
سا سس کیت یداه سا ام وی
ماس بسسووسس ها موی ]
GBD, ار
ام اه اه اوه دسا اس رسمه
BoB یسیع سای
| ۱» بجعت موسوم OED
[Rehabil te cert dro اه امس ساني بين
وميه مها
|
صفحه 54:
© ٩1۳۳۵۵: دبا - وم ©9 > ججدص ]م0 اجات( Merce
